SiC Half-Bridge Module
1200 V silicon-carbide half-bridge power module with integrated NTC and low-inductance layout.
- Voltage
- 1200 V
- Current
- 100 A per switch
- Rds(on)
- 16 mΩ typ.
- Switching
- Up to 100 kHz
Efficiency without compromise
SiC and GaN-based power modules, isolated DC-DC converters, and gate drivers engineered for EV traction, solar inverters, and industrial motor drives.
Product range
Compare key specifications and send a part-specific request to our applications team.
1200 V silicon-carbide half-bridge power module with integrated NTC and low-inductance layout.
650 V GaN e-HEMT power stage with integrated driver for ultra-dense adapters and servers.
Quarter-brick isolated converter, 48 V input to 12 V output for telecom and datacenter rails.
Isolated single-channel gate driver with active Miller clamp, DESAT protection, and 5 A drive.
Application engineering
Most of our power modules can be tailored — custom values, packages, screening levels, or tape-and-reel options. Talk to an application engineer about your requirements.